Home → 产品介绍 → Si-Sic AIN is a material with features similar to silicon wafers such as thermal expansion, high conductivity and heat shock strength and is capable of maintaining optimal conditions within a severe plasma environment. AIN may reduce particles and contamination, which occurs during processing, due to the strong conrrosiveness of fluorine and chlorine that are necessary in semiconductor process. Accordingly, its application increases for dry etching, CVD and other process fixtures of the semiconductor process. High conductivity / heat shock resistance : uniform thermal distribution (stablity at high & low process), resistance to sudden temperature dhange during process, excellent high temperature strength Low thermal expansion :  reduce particles reduced by friction by thermal expansion coefficient similar to Si/resistance to temperature variance Anti-corrosiveness against fluorine and chloring : higher yield by reduced particles Nozzle (nozzle/injector), cover plate, clamp ring, shower plate, dummy wafer, microwave transmission window (micro window) and etc. Purity % 99.9 Bulk Density [g/cc] 3.30~3.32 Vickers Hardness [GPa] Load0.5Kg HVI-9.807N 11.2 Bending Strength [MPa] 310 Compressive Strength [Mpa] 3000 Youngs Modulus [Gpa] 310~320 Poissons Ratio 0.24 Thermal Conductivity [W/mK] 160~170 Thermal Expansion [x10-6/°C] 4.2 Heat Shock Strength [△T°C] 400 Specific Heat [RT] (J/kg.K) 0.72 x 103 Max Useable Temperature [°C] air atmosphere 800~1000 N2, Ar,Vacuum 1900 Volume Resistivity [Ω. ㎝] 1013~1014 Dielectric Strength [V/m] 14~16 x 106 Dielectric Constant [25°C 1MHZ] 9