Home → Product Info→ Si-SiC With various features such as high stiffness, stability at high temperatures, anti-corrosiveness and high thermal conductivity, Si-SiC is one the most promising materials among fine ceramics. High pure Si-SiC Tube, Boat is stabilized at high temperature over 1,200°C, so it has significantly contributed to improvement of quality and efficiency in semiconductor diffusion process, atmospheric pressure CVD and LP-CVD process. In addition, as the ring-type jig, and cathode etc for the etcher process have been replaced with Si-SiC, life time is significantly increased, contributing to cost saving. Chemical properties :  Si-SiC is a vary stable composite and resistant against solutions of HCI, HF, H2, H2SO4, NaOH and etc. Electric/mechanical properties :  Pure Si-SiC crystal is insulated in ambient temperature but its properties are variable depending on types and amounts of impurities. CVD-SiC Coating products :  CVD coating lets surface layer be more compact, preventing impurities from diffused and emitted and increases anti-corrosiveness against acid solution. *BOAT case-shaped product to transfer wafer from thermal oxide diffusion CVD process to the next process *TUBE product boat products in thermal oxide CVD process *CAP supporting SiC and insulating to prevent internal loss of heat *Othe ether process/OLED device products types of semiconductor tools & fixtures such as ring type, large plates and susceptors, industrial and cutting tools, mechanical seals, high temperature, springs, and engine parts Purity % 99.99 Bulk Density [g/cc] 3.02 Vickers Hardness [GPa] Load0.5Kg HVI-9.807N 21~22 Bending Strength [MPa] 250 Compressive Strength [Mpa] 2700 Youngs Modulus [Gpa] 270 Poissons Ratio 0.24 Thermal Conductivity [W/mK] 175 Thermal Expansion [x10-6/°C] 4.3 Heat Shock Strength [△T°C] 400 Specific Heat [RT] (J/kg.K) 0.68 Max Useable Temperature [°C] 1300 Volume Resistivity [Ω. ㎝] 10-1 Dielectric Strength [V/m] 35 X 106 Dielectric Constant [25°C 1MHZ] 2.7